Synthesis of Vertically Standing MoS2 Triangles on SiC

نویسندگان

  • Feifei Lan
  • Zhanping Lai
  • Yongkuan Xu
  • Hongjuan Cheng
  • Zaien Wang
  • Chengjun Qi
  • Jianli Chen
  • Song Zhang
چکیده

Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.

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عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016